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IWN 2010 at MRS Website

The International Workshop on Nitride semiconductors (IWN2010) was held at the Marriott Tampa Waterside Hotel & Marina in Tampa, Florida, U.S.A., September 19 – 24, 2010.
Currently, we are accepting Manuscripts for the Workshop Proceedings. Final manuscript submission deadline is Friday October 15th, 2010

Meeting statistics

719 Abstracts
385 Oral Presentations
239 Poster Presentations
793 Registrations
        North America 305
        Asia 255
        Europe 204

This biennial workshop was the sixth following those in Nagoya, Aachen, Pittsburgh, Kyoto and Montreux and complemented the biennial series of the International Conference on Nitride Semiconductors (ICNS).

The Workshop provided plenary sessions, parallel topical sessions, poster sessions, and industrial exhibitions. True to the spirit of the Workshop, social functions will were chosen to foster participant interaction and discussion in the pleasant environment of Tampa, Florida.

Important dates

·         The next International Workshop on Nitride Semiconductors will be held October 14-19, 2012 in Sapporo, Japan.
Hiroshi Amano (Nagoya University): IWN'2012 Executive Committee Chair
Yoichi Kawakami (Kyoto University): IWN'2012 Program Committee Chair

Winners of the IWN 2010 Best Poster Award

·         Comprising a commemorative ribbon and a cash prize of US-$ 100.

Monday Sept. 20, 2010

AP1.34; MBE Growth of InGaN-GaN Superlattices for Optoelectronic Devices
C. Boney, R. Pillai, D. Starikov, Dept. of Physics, University of Houston, Houston, TX; A. Bensaoula, Depts. of Physics and Electrical and Computer Engineering, University of Houston, Houston, TX; I. Hernandez, D. Starikov, Integrated Micro Sensors, Inc., Houston, TX;
PRESENTER: Chris Boney

AP1.24; RF-MBE Growth of Cubic InN and InGaN Films on YSZ(001) Substrates
K. Nakamura, T. Ishida, M. Kakuda, S. Kuboya, K. Onabe, Department of Advanced Materials Science, The University of Tokyo, Kashiwa, JAPAN;

Tuesday Sept. 21, 2010

LBNP1.3; 100 nm Gate Length Self-aligned E-mode N-polar GaN MISFETs with Current Gain Cutoff Frequency (ft) of 120 GHz
U. Singisetti, M. Wong, S. Dasgupta, . Nidhi, B.L. Swenson, B.J. Thibeault, U.K. Mishra, Materials Department, University of California-Santa Barbara, Santa Barbara, CA; J.S. Speck, ECE Department, University of California-Santa Barbara, Santa Barbara, CA;
PRESENTER: Uttam Singisetti

HP1.30; Efficiency Enhancement in AlGaN Deep-UV LEDs Using High-Reflectivity Al-based p-type Electrode
M. Akiba, H. Hirayama, Y. Tsukada, N. Maeda, RIKEN, wako, JAPAN; M. Akiba, Y. Tsukada, N. Kamata, Saitama University, saitama, JAPAN; M. Akiba, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata, JST-CREST, Kawaguchi, JAPAN;
PRESENTER: Masahiro Akiba

Wednesday Sept. 22, 2010

CP1.17; Optical Properties of Homoepitaxial C- and M-Plane AlN
M. Feneberg, R. Goldhahn, Institut für Experimentelle Physik, Abteilung Materialphysik, Otto-von-Guericke-Universität Magdeburg, Magdeburg, GERMANY; M. Feneberg, B. Neuschl, K. Thonke, Institut für Quantenmaterie / Gruppe Halbleiterphysik, Universität Ulm, Ulm, GERMANY; R. Collazo, A. Rice, Z. Sitar, Department of Material Science and Engineering, North Carolina State University, Raleigh, NC; Z. Sitar, J. Xie, S. Mita, HexaTech, Inc., Morrisville, NC; M. Feneberg, G. Rossbach, E. Sakalauskas, R. Goldhahn, Institut für Physik, TU Ilmenau, Ilmenau, GERMANY; M. Roeppischer, C. Cobet, N. Esser, Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Berlin, GERMANY;
PRESENTER: Martin Feneberg

GP1.12; Fabrication of Periodically Poled AlN Waveguides with Sub-micron Periods
J. Wright, C. Moe, A.V. Sampath, G.A. Garrett, M. Wraback, US Army Research Laboratory, Adelphi, MD;
PRESENTER: Jonathan Wright

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