Holding Nitride semiconductor international workshop 2010-2

An update of activity at startup Nitek was provided by Vinod Adivarahan. He is a hybrid / multichip version with an output of 233 mW at room temperature, producing a pixellated single chip LED operating at 280 nm with a power of 53 mW at South Carolina spin off company (Nitek). These power levels are suitable for sterilization, UV curing and biological detection applications. Tomas Palacios, a nitride transistor MIT, provided further evidence for increased versatility in the Ill-Nitride field. In the invited talks he argues that GaN is an ideal transistor for mm and sub mm wave applications. A description of a transistor with 225 GHz bubble and 300 GHz fma «, and an overview frequency of path to terahertz. Palacios then set the stage for the parallel session later in the week. GaN on silicon power electronics market “Lohan’s fruit”. It has established the silicon power device market with $ 200- $ 40 billion. Another scientist who accepts the lecture request at the meeting was Mr. Masaaki Kuzuhara of Fukui University. Japan also talked about nitride transistors. He detailed the high temperature operation of AigaN Transistor whose aluminum concentration exceeds 50%. At excellent mutant temperatures with these GaN channels, we open up yet another transistor market for silicon nitride. UP Madrid, Spain ‘s Enrique Calleja Pardo has announced a great summary of the mechanisms that are now well understood, for nanorod nucleation and growth. Mr. Pardo insists that this field is “fully matured” and introduces the research of H. Sekiguchi and his colleagues (see APPL.PHYS. LET. 96 231104 (2010)), its details Manufacturing and characterization of the full color range of nanorod-based LEDs, and many other equally impressive devices. After the two-day opening of the invited session, delegates spread the choice in the paralyzed smorgasbord 2-day concurrent session of the heart. Words can not be justice against the number of alternatives available. Statistics however, in 2 days spanning episode growth – 385 conversations and 240 posters give flavor; bulk crystal growth; optical, electronic and magnetic properties; device processing and manufacturing technology; defect characterization And structural analysis. Theory and simulation. Session newly added by solar power generation and energy harvesting This new session delivered a lecture on solar power generation and water splitting by sunlight It was. The attendance was sound and only the room where the invited session was standing was. They were not there to hear good things, but they are working on one of the weak points of nitride devices. The unavoidable truth, the result of all of today’s InGaN photovoltaic is one-digit efficiency is very bad. This poor display resulting from phase separation Minimum radiation in InGaN that limits the actually achievable device energy bandgap to a part of the solar spectrum. As a result, the efficiency is lower. As a way to overcome these problems, Christiana Honsberg invited speakers, Arizona State University. She announced an interesting new result from collaboration with Michael Georgia Institute of Technology Moseley explains the outline of the growth method that can completely eliminate the stage Separation. Similar growth techniques are used by the team of Chris Boney of the University of Houston. A considerable current was obtained, but it was lower than expected. Meeting splitting water emphasizes the problem has surface stability against photoelectrochemical etching. The results realized so far are surface treatment and measurement methodology. Some speakers need photo-electrochemical process to include a way to separate hydrogen and oxygen. This topic is mainly outside the focus of the session. MBE: There was an interesting subtle flow at the IWN meeting which did go down but did not go out. Meeting: Resurgence on promising MBE results, especially growth of InGaN based devices. Evidence For details of this resurgence, control of phase separation throughout the compatibility gap using Metal Modulated Epitaxy (MME) spoken by Georgia Institute of Technology Moseley. It was, and it is also posted on the poster of the InGaN Solar Prize winner of Chris Boney. Ultra high growth rate is the result of Los Alamos National Laboratory group uses a scalable ENABLE process. Also, Christina Honsberg explained about the influence of MME on InGaN solar cells. MBE has promising capabilities Nitrogen polar green LED reported by a group of Ohio State University in a slow news session As Jonathan Lowder and co-workers at the Georgia Institute of Technology presented, , But never shortest, Amano Hiroshi, a pioneer of invited talk LEDs, MBE and related variants can achieve that other technologies are struggling to achieve.