Holding Nitride semiconductor international workshop 2010-3

Too fast
Page 4
IWN 2010 emphasized promises to determine if any of these new reports will emerge in manufacturable products On the last day of the development conference on Alternative Growth Technology in MOCVD dominant field, As Christian Wetzel and Asif Kahn of the conference, Meiji University Isamu Akasaki (Honorary Chairman of Nagoya University) is a pioneering research and leadership community of nitrides. The next IWN meeting is scheduled to be held in Sapporo from 14th to 19th October 2012, Japan. Hiroshi Amano from Nagoya University served as chairman of the executive committee and served as program chairman of Kyoto University. If the III-nitride field continues to grow at the present speed, the famous beer garden in Sapporo near the conference will dry and dry in a treasure trove of thirsty “nitrider”. Trump session at Tampa To maintain the nature of the IWN workshop, the Conference Organizing Committee, the IWN Conference. These sessions, which gave the opportunity to ask questions of expert panel invited to the audience, attended and succeeded from so many rooms. Discussion is active, and in some cases there is room for fun discussion. Exciting session focuses on the integration of silicon with TJ LLL-N: 2 amazing semiconductor’s best, with a new opportunity (and challenges) of lll-N semiconductors in power electronics, optoelectronics and energy Scaling for pushing, focusing on problems of speed and reliability: for RF electronics) J LLL-N issues “standard” HEMT performance Ideal III-nitride substrate technology: substrate cost Discussion on getting a proper balance between the cost of the board and the board that quality can improve the performance of the device y LED IQE roadmap: from 70% to 90%, this concerns the improvement of efficiency Discussed all the issues \ $ LLL-N nanowire: Discussion on basic issues concerning growth, doping, and new applications. IWNS Facts and Numbers Nitride International Semiconductor International Workshop 2010 was held from 19th to 24th September at Tampa Florida. The attendees of the meeting exceeded the previous IWN (2008) in Montreux by about 15%, and 793 people are making their way from all over the world. 305 people in North America, 255 in Asia, 204 in Europe. Following the footprint of the previous IWN meeting, this conference was followed by a two-day invitation plain two-day parallel session, review of two plenary sessions, late news and workshop epitaxy, RF transistors, nanostructures Thanks to the introduction of power switching sessions, sessions were added during this period, including transistors, RF systems, solar power, energy harvesting and so on.